The temperature dependence of the efficiency of an AlGaAs/GaAs solar cell operating at high concentration

1 April 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (4) , 88-89
https://doi.org/10.1109/EDL.1981.25351

Abstract

The temperature dependence of the efficiency of a high efficiency AlGaAs/GaAs solar cell has been measured over a range of 200 to 750 AM2 suns and 24 to 150°C through the use of a flash test technique. Over the range of efficiency for which the cell was designed, the coefficient of efficiency degradation with respect to temperature is about half of the best value reported for silicon.

Keywords

TEMPERATURE DEPENDENCE
GALLIUM ARSENIDE
PHOTOVOLTAIC CELLS
SUN
VOLTAGE
SHORT CIRCUIT CURRENTS
PHOTOVOLTAIC SYSTEMS
SOLAR POWER GENERATION
SILICON
PROGRAMMABLE LOGIC ARRAYS