S-parameter model of dual-gate GaAs MESFET
- 20 January 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (2) , 39-40
- https://doi.org/10.1049/el:19830029
Abstract
A simple modelling procedure for the dual-gate MESFET is presented. The model is based on a cascoded connection of two single-gate devices, with each device represented in terms of its s-parameters. These s-parameters are obtained from the overall dual-gate MESFET s-parameters, using accurate deembedding techniques.Keywords
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