Low-threshold 1.3 μm GaInAsP/InP lasers grown by atmospheric-pressure MOVPE

6 June 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (12) , 521-522
https://doi.org/10.1049/el:19850368

Abstract

Room-temperature pulsed operation has been achieved at and below 1.3 μm for GaInAsP/InP lasers grown by atmospheric-pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.0 kA/cm² (for a cavity length of 1000 μm) have been obtained.

Keywords

SEMICONDUCTOR LASERS
ATMOSPHERIC-PRESSURE MOVPE
1.3 MICRONS WAVELENGTH
ROOM TEMPERATURE
PULSED OPERATION
VPE
METALORGANIC VAPOUR PHASE EPITAXY
LOW-THRESHOLD OPERATION
GAINASP/INP
III-V SEMICONDUCTORS

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