A GaAs1−xPx NEGATIVE-RESISTANCE LIGHT-EMITTING DIODE
- 15 June 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 10 (12) , 333-334
- https://doi.org/10.1063/1.1728200
Abstract
The electrical and optical properties of double‐injection diodes fabricated from GaAs1−xPx are described. Under forward‐biased conditions, these diodes exhibit both negative resistance and visible light emission characteristics.Keywords
This publication has 5 references indexed in Scilit:
- Electrical and optical properties of double injection diodes in semi-insulating GaAsIEEE Transactions on Electron Devices, 1966
- Filamentary Injection in Semi-Insulating SiliconJournal of Applied Physics, 1966
- Electroluminescent Gallium Arsenide Diodes with Negative ResistanceJournal of Applied Physics, 1964
- GaAs p-si-n NEGATIVE RESISTANCE INFRARED EMITTING DIODE AT LIQUID N2 AND ROOM TEMPERATURESApplied Physics Letters, 1964
- Double Injection in InsulatorsPhysical Review B, 1962