Polarizability of a Bias–Temperature Drifted Species in Thin Film Transistor Structures

Publisher Website
Google Scholar
Abstract
Instabilities in thin film transistors have been observed and it has been possible to isolate each instability in samples and study its effect separately. An instability involving the trapping and freeing of electronic charges from trapping centers in the bulk of the insulator has been observed. Control over this instability has been achieved with the aid of bias–temperature (B–T) stress cycles, and the transistor performance altered by introducing relatively stable trapping centers into the insulator. By manipulating the charge state of these centers, the polarizability of the drifted species forming the centers in the matrix of the insulator has been determined. This permits the calculation of a classical radius for the trapped electrons in the host insulator and agreement between the experimental value, and the value calculated using a hydrogen-like impurity model is good. The polarizability for sodium in SiOx has been observed to be from 1.1 to 3.4 × 10−36 F/m and 4.8 to 6.3 × 10−36 F/m for sodium in ZnS.

This publication has 0 references indexed in Scilit: