Abstract
The method described, used to prepare thin dielectric layers, employs a programmed deposition rate control system based on the frequency variations of a piezoelectric quartz crystal on which a layer is deposited simultaneously with the required coating. The most important parameters of the system are discussed as well as the results achieved with magnesium fluoride and silicon monoxide layers of thicknesses from 1500 Å to 3000 Å.

This publication has 1 reference indexed in Scilit: