Theory of the temperature dependence of the enhanced valley splitting in surface states of silicon mosfets
- 31 August 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 98 (1-3) , 370-377
- https://doi.org/10.1016/0039-6028(80)90517-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Effect of interface on the effective mass approximationSurface Science, 1978
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- Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si III. Enhancement of Splittings by Many-Body EffectsJournal of the Physics Society Japan, 1977
- Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si II. Electric Break ThroughJournal of the Physics Society Japan, 1977
- Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si I. Formulation by Extended Zone Effective Mass TheoryJournal of the Physics Society Japan, 1977
- Valley splitting in an n-channel (100) inversion layer on p-type siliconSurface Science, 1976
- Theory of valley-splitting in surface quantum states of Silicon MOSFETSZeitschrift für Physik B Condensed Matter, 1975
- Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. III. Many-Site ApproximationJournal of the Physics Society Japan, 1974
- Factor and Donor Spin-Lattice Relaxation for Electrons in Germanium and SiliconPhysical Review B, 1960