Photon drag detection in p-type silicon
- 21 April 1978
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 11 (6) , L97-L99
- https://doi.org/10.1088/0022-3727/11/6/001
Abstract
Experimental measurements of the spectral responsivity of (100) and (111) orientated, p-type silicon has been made, using HF, HCl, HBr, H2O and CO2 lasers, in the 2.5-33 mu m range. The high responsivity observed at 33 mu m is explained by reference to the band structure of p-type silicon.Keywords
This publication has 8 references indexed in Scilit:
- Optical rectification and photon drag in n-type gallium phosphideJournal of Physics C: Solid State Physics, 1977
- The photon drag spectrum of p-type germaniumJournal of Physics C: Solid State Physics, 1977
- The photon-drag spectrum of p-type germanium between 2.5 and 11.0μmJournal of Physics C: Solid State Physics, 1975
- The water-vapor laserIEEE Journal of Quantum Electronics, 1969
- Determination of the spin-orbit splitting in the valence band of silicon by means of infra-red absorptionJournal of Physics and Chemistry of Solids, 1966
- Lattice bands in germaniumProceedings of the Physical Society, 1965
- The Zero-Point Energy and Equation of State of Solid Helium at the Absolute ZeroProceedings of the Physical Society, 1959
- Theory of the Infrared Absorption of Carriers in Germanium and SiliconPhysical Review B, 1955