Properties of Ionic Bombarded Silicon
- 1 January 1952
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 31 (1) , 104-121
- https://doi.org/10.1002/j.1538-7305.1952.tb01378.x
Abstract
This paper deals with a new and very interesting technique by which the properties of silicon surfaces are altered very materially by bombardment with ions of such gases us hydrogen, helium, nitrogen and argon. The change in rectifying properties has...Keywords
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