Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- 1 November 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (11) , 6751-6753
- https://doi.org/10.1063/1.331867
Abstract
Heavy Si doping of GaAs and AlGaAs grown by molecular beam epitaxy has been studied. By using a slow growth rate of 1000 Å/h, the electron concentration obtained for GaAs was 1.1×1019 cm−3, which is higher than the previously reported limit of 5×1018 cm−3. The accumulation of excess Si near the surfaces of GaAs and AlGaAs has been identified by secondary ion mass spectroscopy. A Si-induced 3×2 surface structure has been observed, and the influence of arsenic to gallium flux ratio on the surface morphology is discussed. Photoluminescence spectra of the doped layers are presented.This publication has 6 references indexed in Scilit:
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