Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs

28 February 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (5) , 171-172
https://doi.org/10.1049/el:19800122

Abstract

Deep levels in GaAs grown by molecular-beam epitaxy have been examined. Dependence of both electron and hole trap densities on growth parameters such as growth temperature have been obtained.

Keywords

GAAS
MBE
GROWTH TEMPERATURE
ELECTRON TRAP DENSITIES
HOLE TRAP DENSITIES
DEEP LEVELS