Monte Carlo simulation of Si and GaAs avalanche electron emitting diodes

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Abstract
Results of Monte Carlo simulations of Si and GaAs p‐n electron emitters are presented. A single‐electron Monte Carlo transport simulation is used to obtain the total number, including avalanche multiplication, of electrons which reach the surface of the semiconductor, as well as the fraction of these which overcome the work function and are emitted into the vacuum. The distribution function is obtained, as well as ensemble average of quantities such as the ionization coefficient. The efficiency of the device is calculated as a function of both the work function and the top conducting channel thickness. The potential performance of GaAs devices is explored via the Monte Carlo simulation, and calculated results for the Si device are compared to published experimental data.