Pressure Effect on LaSb and CeAs

Abstract
Pressure effects on the electronic states in LaSb and CeAs are studied in detail based on high-pressure dHvA measurement. In LaSb, it was shown that even for small carriers, the Fermi surfaces do not change uniformly because of a strong k -dependent p - d mixing effect on the conduction band and strong deviation from k 2 -dispersion of the hole band. Strong anisotropy found in c 11 acoustic dHvA was attributed to the above mechanism. A magnetic polaron lattice, inserted in the 4 f Γ 7 ground state, is able to explain unusual properties in CeAs, as well as in CeP. \sloppy

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