Si and SiO2 Etching Characteristics Using Reactive Ion Etching with CF4-Cl2 Gas Mixture
- 1 August 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (8)
- https://doi.org/10.1143/jjap.19.1579
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF 4 ‐ H 2Journal of the Electrochemical Society, 1979
- Competitive Mechanisms in Reactive Ion Etching in a CF 4 PlasmaJournal of the Electrochemical Society, 1979
- Anisotropic Etching of Silicon by Gas PlasmaJapanese Journal of Applied Physics, 1977