Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities
- 22 August 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (9) , 1345-1347
- https://doi.org/10.1063/1.1290144
Abstract
We have fabricated planar semiconductor microcavities with metallic mirrors in which we have observed both enhancement and inhibition of spontaneous emission, at room temperature. Our results are quantitatively accounted for by modeling the band-to-band emission as arising from point dipoles. Observation of these cavity quantum electrodynamics effects in room temperature semiconductor structures opens the way to optoelectronic devices with controlled spontaneous emission.Keywords
This publication has 11 references indexed in Scilit:
- Enhanced spontaneous emission using quantum dots and an apertured microcavityIEEE Journal of Quantum Electronics, 1999
- Enhanced Spontaneous Emission by Quantum Boxes in a Monolithic Optical MicrocavityPhysical Review Letters, 1998
- Spontaneous emission control in semiconductor microcavities with metallic or Bragg mirrorsIEEE Journal of Quantum Electronics, 1998
- Time-resolved spontaneous emission of excitons in a microcavity: Behavior of the individual exciton-photon mixed statesPhysical Review B, 1996
- Cavity-Induced Changes of Spontaneous Emission Lifetime in One-Dimensional Semiconductor MicrocavitiesPhysical Review Letters, 1995
- Controlled atomic spontaneous emission fromin a transparent Si/microcavityPhysical Review Letters, 1993
- Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavityPhysical Review Letters, 1992
- Modification of spontaneous emission rate in planar dielectric microcavity structuresPhysical Review A, 1991
- Inhibited Spontaneous Emission by a Rydberg AtomPhysical Review Letters, 1985
- Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAsJournal of Applied Physics, 1978