Native Oxide Mask for Zinc Diffusion in Gallium Arsenide

1 June 1974

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 121 (6) , 820-822
https://doi.org/10.1149/1.2401926

Abstract

This paper reports the first use of an amorphous native oxide on gallium arsenide to mask against zinc diffusion. Anodic oxides were grown at low temperature (≤100°C), and stripes were defined in this oxide using standard photolithographic processing. These samples were diffused, after an appropriate annealing cycle, in a closed system using a zinc source ( Zn 3 As 2 + GaAs ) at 612°C for times up to 2 hr. Diffusion depths were measured using a lap and stain procedure, and the results showed the oxide to be effective as a zinc barrier. Furthermore, no anomalous lateral underdiffusion was observed indicative of a high integrity interface between the oxide and semiconductor.

Keywords

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