New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes
- 1 January 2000
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 50 (1-4) , 15-23
- https://doi.org/10.1016/s0167-9317(99)00259-2
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Dielectric barriers for Cu metallization systemsMicroelectronic Engineering, 1997
- Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of FilmsJournal of the Electrochemical Society, 1992