Comment on “Schottky contact and thermal stability of Ni on n-type GaN” [J. Appl. Phys. 80, 1623 (1996)]
- 1 July 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (1) , 491-492
- https://doi.org/10.1063/1.365845
Abstract
J. D. Guo et al. [J. Appl. Phys. 80, 1623 (1996)] have studied the thermal stability of Ni on GaN and have deduced by x-ray diffraction measurements that new phases form at the interface between Ni and GaN. This determination, based solely on x-ray diffraction data, is ambiguous, as the peaks assigned to the Ga 4 Ni 3 and Ni–N phases can also be attributed to substrate related x-ray peaks.This publication has 1 reference indexed in Scilit:
- Schottky contact and the thermal stability of Ni on n-type GaNJournal of Applied Physics, 1996