A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE
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- 5 December 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 40 (12) , 2598-2608
- https://doi.org/10.1109/jssc.2005.857425
Abstract
This work presents a fully integrated linearized CMOS RF amplifier, integrated in a 0.18-/spl mu/m CMOS process. The amplifier is implemented on a single chip, requiring no external matching or tuning networks. Peak output power is 27 dBm with a power-added efficiency (PAE) of 34%. The amplitude modulator, implemented on the same chip as the RF amplifier, modulates the supply voltage of the RF amplifier. This results in a power efficient amplification of nonconstant envelope RF signals. The RF power amplifier and amplitude modulator are optimized for the amplification of EDGE signals. The EDGE spectral mask and EVM requirements are met over a wide power range. The maximum EDGE output power is 23.8 dBm and meets the class E3 power requirement of 22 dBm. The corresponding output spectrum at 400 and 600 kHz frequency offset is -59 dB and -70 dB. The EVM has an RMS value of 1.60% and a peak value of 5.87%.Keywords
This publication has 9 references indexed in Scilit:
- Quad-band GSM/GPRS/EDGE polar loop transmitterIEEE Journal of Solid-State Circuits, 2004
- A polar modulator transmitter for GSM/EDGEIEEE Journal of Solid-State Circuits, 2004
- Polar modulator for multi-mode cell phonesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- A state-space behavioral model for CMOS class E power amplifiersIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2003
- An IC for linearizing RF power amplifiers using envelope elimination and restorationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Fully integrated CMOS power amplifier design using the distributed active-transformer architectureIEEE Journal of Solid-State Circuits, 2002
- A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communicationsIEEE Journal of Solid-State Circuits, 1999
- Intermodulation distortion in Kahn-technique transmittersIEEE Transactions on Microwave Theory and Techniques, 1996
- Class E-A new class of high-efficiency tuned single-ended switching power amplifiersIEEE Journal of Solid-State Circuits, 1975