Role of defects in the passivation of III–V semiconductor surfaces modified by alkali metals: O2/Rb/p- and n-type GaSb(110)
- 1 July 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (4) , 1867-1873
- https://doi.org/10.1116/1.586214
Abstract
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