Band structures of GaGeAsGe and InGeAsGe superlattices
- 1 March 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 69 (9) , 869-872
- https://doi.org/10.1016/0038-1098(89)90922-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A Pseudopotential Approach to Mixing Enthalpies of III-V Ternary Semiconductor AlloysJapanese Journal of Applied Physics, 1987
- Band Structure of Semiconductor Superlattices with Ultrathin Layers (GaAs)n/(AlAs)nwithn=1, 2, 3, 4Journal of the Physics Society Japan, 1985
- Zinc-blende—diamond order-disorder transition in metastable crystallinealloysPhysical Review B, 1983
- A review of recent research on the growth and physical properties of single crystal metastable elemental and alloy semiconductorsJournal of Vacuum Science & Technology B, 1983
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980