Computer calculation of ionisation rates in silicon for a diffused junction
- 1 October 1967
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 3 (10) , 469-471
- https://doi.org/10.1049/el:19670372
Abstract
A new calculation method, for the ionisation rates αn, and αp from the ionisation integrals and from γ = αp/αn measurements on diffused junctions, gives new data which, especially for low electric fields, are different from the data of Lee, Logan et al. in value and in slope.Keywords
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