Observation of screw dislocations in GaAs
- 1 February 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 37 (2) , 184-186
- https://doi.org/10.1016/0022-0248(77)90082-3
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressureIEEE Transactions on Electron Devices, 1975
- LPE growth of GaAs: Formation of nuclei and surface terracesJournal of Crystal Growth, 1974
- Surface morphology of liquid-phase epitaxial layersJournal of Applied Physics, 1973
- Screw-Type Nucleus Centers in Silicon Epitaxial GrowthJournal of Applied Physics, 1971
- Observation of Nucleus Centers on Solution-Grown Germanium Epitaxial LayersJournal of Applied Physics, 1971
- Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon LayersJapanese Journal of Applied Physics, 1968
- Crystallographic Imperfections in Epitaxially Grown SiliconJournal of Applied Physics, 1962
- Spiral and Other Growth Forms of Synthetic Diamonds: A Distinction Between Natural and Synthetic DiamondNature, 1959
- Dislocations in the diamond latticeJournal of Physics and Chemistry of Solids, 1958
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956