Kinetics of the solid-state amorphizing reaction in thin films studied by electrical resistivity
- 3 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (1) , 36-38
- https://doi.org/10.1063/1.101747
Abstract
We deposited Ni-Zr thin-film multilayers by electron beam evaporation onto polished alumina substrates. The multilayers were annealed at a constant heating rate, and in situ resistance measurements made to derive the growth kinetics of amorphous NiZr alloy at the Ni/Zr interfaces. Using a simple model that relates resistance change to amorphous-layer thickness, we derive the apparent diffusivity of nickel in amorphous Ni50Zr50, DNi =2.5×10−5 exp[−1.01(eV)/kT] cm2 s−1.Keywords
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