Abstract
We deposited Ni-Zr thin-film multilayers by electron beam evaporation onto polished alumina substrates. The multilayers were annealed at a constant heating rate, and in situ resistance measurements made to derive the growth kinetics of amorphous NiZr alloy at the Ni/Zr interfaces. Using a simple model that relates resistance change to amorphous-layer thickness, we derive the apparent diffusivity of nickel in amorphous Ni50Zr50, DNi =2.5×10−5 exp[−1.01(eV)/kT] cm2 s−1.