Visualization of current filaments in n-GaAs by photoluminescence quenching
- 3 June 1996
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (23) , 3329-3331
- https://doi.org/10.1063/1.116047
Abstract
Hot electrons in semiconductors are known to quench radiative impurity and exciton recombination photoluminescence. This effect has been applied in a low invasive technique to determine the spatial form of current filaments generated by impurity breakdown in high purity n‐GaAs epitaxial layers at low temperatures. Observations on samples with Corbino disc contacts clearly demonstrate symmetry breaking and self‐organization by the current filamentation.Keywords
This publication has 0 references indexed in Scilit: