Neutral impurity scattering in semiconductors
- 15 June 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 11 (12) , 5208-5210
- https://doi.org/10.1103/physrevb.11.5208
Abstract
The drift mobility and ratio of Hall to drift mobility are computed for the scattering of carriers by a hydrogenic neutral impurity. The scattering is treated using the almost exact values of the phase shifts for scattering of electrons by neutral hydrogen scaled for the effective mass and dielectric constant of the semiconductor.Keywords
This publication has 5 references indexed in Scilit:
- Application of the Method of Polarized Orbitals to the Scattering of Electrons from HydrogenPhysical Review B, 1961
- Ionized Impurity Scattering in Nondegenerate SemiconductorsPhysical Review B, 1956
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1956
- The application of variational methods to atomic scattering problems - I. The elastic scattering of electrons by hydrogen atomsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1951
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950