Dependence of barrier height on energy gap in Au n-type GaAs1−xPx Schottky diodes
- 1 October 1974
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (10) , 1107-1108
- https://doi.org/10.1016/0038-1101(74)90152-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Reverse current characteristics of some imperfect Schottky barriersSolid-State Electronics, 1973
- Interfaces and recombination currents in Schottky barrier diodesSolid-State Electronics, 1972
- FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDSPhysical Review Letters, 1969
- Conduction Band Minima ofPhysical Review B, 1964