Theory of Alpha for P-N-P Diffused Junction Transistors

1 November 1952

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE

Vol. 40 (11) , 1424-1428
https://doi.org/10.1109/jrproc.1952.273974

Abstract

Equations are developed for the emitter and collector currents for this type of transistor, and the resulting expressions are then used to obtain the current-gain factor. The low-frequency value of the current-gain factor and its high-frequency cutoff value are shown to depend strongly on the width of the base region, the behavior at high frequencies being better for small base width. The high-frequency behavior when used in grounded emitter applications depends more directly on the lifetime of holes in the germanium and shows only a second-order dependence on the base width; the lower the lifetime the higher the frequency cutoff value.

Keywords

This publication has 3 references indexed in Scilit:

$p - n$ Junction Transistors
Physical Review B, 1951
$P - N$ Junctions Prepared by Impurity Diffusion
Physical Review B, 1950
The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
Bell System Technical Journal, 1949