Temperature dependence of the dielectric function and the interband critical-point parameters of GaP
- 4 October 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 233 (1-2) , 185-188
- https://doi.org/10.1016/0040-6090(93)90086-5
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- The lattice dynamics of gallium phosphideJournal of Physics C: Solid State Physics, 1979
- Determination of the dilation and vibrational contributions to the indirect energy band gap of diamond semiconductorCanadian Journal of Physics, 1979
- Lattice dynamics of zincblende structure compounds II. Shell modelComputer Physics Communications, 1979
- Lattice dynamics of zincblende structure compounds using deformation-dipole model and rigid ion modelComputer Physics Communications, 1979
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Electroreflectance of GaAs and GaP to 27 eV using synchrotron radiationPhysical Review B, 1975
- Electroreflectance of GaP to 27 eVPhysical Review Letters, 1974
- Band Gap of Gallium Phosphide from 0 to 900°K and Light Emission from Diodes at High TemperaturesPhysical Review B, 1968
- The Occurrence of Singularities in the Elastic Frequency Distribution of a CrystalPhysical Review B, 1953