THE INFLUENCE OF CHEMICAL BONDING ON THE LOW-ENERGY Kα SPECTRUM OF SILICON
- 1 October 1971
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 32 (C4) , C4-295
- https://doi.org/10.1051/jphyscol:1971454
Abstract
It is shown that the recently found low-energy structure of the Si Kα line is sensitive to the chemical environment of the Si atom. Our interpretation that the most prominent part of this low-energy structure is due to K-L2 radiative Auger transitions leads to an explanation of the most pronounced changes. The formation of x-ray excitons is observed at the onset of the K-L2 structure and evidence is also presented for a faint structure which is situated between the Kα line and the proposed K-L2 spectrumKeywords
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