High photoluminescence in erbium-doped chalcogenide thin films
- 1 August 2000
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 272 (2-3) , 200-208
- https://doi.org/10.1016/s0022-3093(00)00119-8
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Electron beam induced changes in the refractive index and film thickness of amorphous AsxS100−x and AsxSe100−x filmsJournal of Applied Physics, 1998
- Reversible photodarkening in As2S3 nanolayersJournal of Non-Crystalline Solids, 1998
- Comparison of nonlinear optical properties of sulfide glasses in bulk and thin film formOptical Materials, 1998
- Luminescence from neodymium-ion-implanted As_2S_3 waveguidesJournal of the Optical Society of America B, 1998
- Photoinduced self-developing relief gratings in thin film chalcogenide As/sub 2/S/sub 3/ glassesJournal of Lightwave Technology, 1997
- Spectral properties of Er3+-doped gallium lanthanum sulphide glassJournal of Non-Crystalline Solids, 1996
- Local structure around Er in silica and sodium silicate glassesJournal of Non-Crystalline Solids, 1991
- General procedure for the analysis of Er^3+ cross sectionsOptics Letters, 1991
- Evaluation of ^4I_15/2 and ^4I_13/2 Stark-level energies in erbium-doped aluminosilicate glass fibersOptics Letters, 1990
- A semiautomatic algorithm for rutherford backscattering analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986