Investigation of Transport Coefficients in Semimetals by the Variational Method. II. Bismuth
- 1 September 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 113 (1) , 59-66
- https://doi.org/10.1002/pssb.2221130104
Abstract
A comparison of the experimental and calculated data for the transport coefficients in bismuth obtained on the basis of the variational microscopic model is carried out. The assumption about the predomination of carrier scattering on acoustic phonons in bismuth is confirmed. The values of deformation potential constants are calculated for a wide range of temperatures. The temperature and magnetic field dependences of transport coefficients in the wide range of temperatures and magnetic fields determined by variational method, completely reproduce the experimental data.Keywords
This publication has 12 references indexed in Scilit:
- Electronic contributions to the elastic constants of tellurium-doped bismuthJournal of Physics C: Solid State Physics, 1977
- Properties of electrons in bismuthUspekhi Fizicheskih Nauk, 1977
- The elastic constants of bismuth-antimony alloy single crystalsJournal of Physics C: Solid State Physics, 1976
- The Seebeck Coefficient of Bismuth in a Longitudinal Magnetic FieldPhysica Status Solidi (b), 1974
- Low-field galvanomagnetic effect of bismuth from 80 °K to 300 °KIl Nuovo Cimento B (1971-1996), 1974
- Electron and hole transport in bismuthJournal of Physics C: Solid State Physics, 1972
- Magnetoresistivity tensor components at intermediate magnetic fields in quenched and annealed bismuthJournal of Physics F: Metal Physics, 1972
- Temperature Dependence of the Low-Field Galvanomagnetic Coefficients of BismuthPhysical Review B, 1969
- Anisotropy of Magnetoacoustic Attenuation and Deformation Potential in BismuthPhysical Review B, 1968
- Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and GermaniumPhysical Review B, 1966