All-binary AlAs—GaAs laser diode
- 1 July 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (7) , 212-214
- https://doi.org/10.1109/edl.1983.25709
Abstract
Thin layers of AlAs and GaAs, grown by molecular beam epitaxy (MBE), are used to simulate the properties of Al x Ga 1-x As. These AlAs-GaAs superlattices (SL's) are used as cladding layers (instead of Al x Ga 1-x As) in heterostructure lasers capable of room-temperature operation. It is thus possible to obtain laser diodes which are composed only of the binary compounds GaAs and AlAs. The all-binary lasers are compared to conventional Al x Ga 1-x As-GaAs double-heterostructure (DH) lasers grown and fabricated under similar conditions.Keywords
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