Temperature Dependence of Ionization Coefficients for InP and 1.3 µm InGaAsP Avalanche Photodiodes

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Abstract
Investigations were made on the temperature dependence of excess noise characteristics for InP and 1.3 µm InGaAsP APDs for the case where electrons are injected into the high field region. The effective ratio of the ionization coefficientsKeff(β/α) was found to decrease with decreasing temperature for both APDs. Theoretical investigations on hot carriers are combined with McIntyre's theory for the excess noise characteristics to explain the experimental results. The dominant scattering process for hot electrons is the intervalley scattering; this leads to the fact that the temperature dependence of the mean free path is greater in the case of electrons than holes. The theoretical analysis provides the best fit to the experimental results. On the basis of the theoretical results, the compositonal dependence of the mean free path for hot electrons is discussed.

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