Aluminum and gallium impurity effects on the photoluminescence from electron irradiated, pulled silicon
- 15 September 1974
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 15 (6) , 1055-1059
- https://doi.org/10.1016/0038-1098(74)90530-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Temperature, stress, and annealing effects on the luminescence from electron-irradiated siliconJournal of Applied Physics, 1973
- Recombination Luminescence in Irradiated SiliconPhysical Review B, 1968
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy PairPhysical Review B, 1967