Metalorganic Chemical Vapor Deposition of ZnO Using D2O as Oxidant
- 1 March 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (3A) , L283-285
- https://doi.org/10.1143/jjap.33.l283
Abstract
ZnO films with low resistivity and high transparency in a wavelength range of 400 nm–1300 nm were successfully grown by the metalorganic chemical vapor deposition (MOCVD) technique using D2O as a new oxidant for diethylzinc on glass substrates. It was also found that the crystal orientation of the films was strongly dependent on the substrate temperature. By employing both D2O and H2O as oxidants for diethylzinc, the surface morphology of low-resistivity ZnO films could be modified. The obtained films are suitable as transparent conducting materials.Keywords
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