Tunnelling in thick-film (cermet) resistors and the minimum of resistance
- 1 May 1983
- journal article
- Published by Springer Nature in Il Nuovo Cimento D
- Vol. 2 (3) , 697-710
- https://doi.org/10.1007/bf02453211
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Conduction mechanisms and 1/f noise in thick-film resistors with Pb3Rh7O15and Pb 2Ru2O7Journal of Applied Physics, 1981
- Piezoresistive effects in thick-film resistorsJournal of Applied Physics, 1980
- Electrical properties and conduction mechanisms of Ru-based thick-film (cermet) resistorsJournal of Applied Physics, 1977
- Influence of the Metal Migration From Screen‐and‐Fired Terminationson the Electrical Characteristics of Thick‐Film ResistorsActive and Passive Electronic Components, 1977
- Structural and electrical properties of granular metal filmsAdvances in Physics, 1975
- Evaluation methods for the examination of thick film materialsRadio and Electronic Engineer, 1975
- Effect of Deep Traps on the Barrier Heights of Metal-Insulator-Metal Tunnel JunctionsPhysical Review Letters, 1969
- Temperature dependence of the resistivity of RuO2 and IrO2Physics Letters A, 1968
- Potential Barriers and Emission-Limited Current Flow Between Closely Spaced Parallel Metal ElectrodesJournal of Applied Physics, 1964
- Tunneling Through Thin Insulating LayersJournal of Applied Physics, 1961