Analytical solution of minority-carrier transport in silicon solar cell emitters
- 1 January 1988
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 738-743 vol.1
- https://doi.org/10.1109/pvsc.1988.105800
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Validity of the quasi-transparent model of the current injected into heavily doped emitters of bipolar devicesIEEE Transactions on Electron Devices, 1987
- Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped siliconIEEE Transactions on Electron Devices, 1986
- A simple method of calculating the minority-carrier current in heavily doped siliconSolid-State Electronics, 1985
- Simple general analytical solution to the minority carrier transport in heavily doped semiconductorsJournal of Applied Physics, 1984
- Current-voltage characteristic for bipolar p-n junction devices with drift fields, including correlation between carrier lifetimes and shallow-impurity concentrationJournal of Applied Physics, 1982
- Drift fields in photovoltaic solar energy converter cellsProceedings of the IEEE, 1963