Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxy
- 1 February 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (3) , 217-219
- https://doi.org/10.1063/1.93046
Abstract
Extremely low threshold GRIN-SCH lasers with single and double active layers were prepared by molecular beam epitaxy as a result of an increased optical confinement, a significant reduction in the internal loss αi, and the increased gain constant β. Averaged Jth 250 A/cm2 and 160 A/cm2 for broad-area Fabry–Perot diodes of cavity lengths 380 and 1125 μm, respectively, and averaged external differential quantum efficiency ηD of 65–80 % were obtained.Keywords
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