A Reliable Method for the Production of High Purity Indium Antimonide†
- 1 May 1959
- journal article
- electronics section
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 6 (5) , 397-402
- https://doi.org/10.1080/00207215908937168
Abstract
Principles described previously have been applied to the production of the semiconducting compound InSb, conveniently and reliably, with uncompensated donor densities of about 1014/cm2. Details of the apparatus and method are given, and the factors limiting the purity to this level are considered.Keywords
This publication has 6 references indexed in Scilit:
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- The Use of Electromagnetic Stirring in Zone Refining†Journal of Electronics and Control, 1958
- The Role of Evaporation in Zone Refining Indium Antimonide†Journal of Electronics and Control, 1957
- Effect of Zone-Refining Variables on the Segregation of Impurities in Indium-AntimonideJournal of the Electrochemical Society, 1956
- Note on the disorientation and impurity substructures in zinc single crystalsActa Metallurgica, 1954
- A PRISMATIC SUBSTRUCTURE FORMED DURING SOLIDIFICATION OF METALSCanadian Journal of Physics, 1953