Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25–100 nm) thin films on LaNiO3 buffered Si

${\mathrm{Pb(Zr, Ti)O}}_{\mathrm{3}}$ (PZT) thin films with (100) preferred orientation were prepared using metalorganic chemical vapor deposition on ${\mathrm{LaNiO}}_{\mathrm{3}}$ (LNO) buffered platinized Si with thickness varying from 25–100 nm. The dependence of electrical properties of PZT films on thickness was studied using several techniques, including polarization–electric field $\mathrm{(P–E),}$ temperature variable current–voltage $\mathrm{(I–V),}$ and capacitance–voltage $\mathrm{(C–V)}$ measurements. Because of the formation of Schottky barriers at ferroelectric/electrode interfaces, built-in electric fields are present. A progressive increment in carrier concentration and interfacial built-in electric field versus reducing PZT film thickness was observed, which is believed to be a dominant factor controlling the measured dielectric/ferroelectric properties. The higher built-in electric field in thinner PZT films would pin the dipoles at the interfacial region and retard the response of dipoles to the external electric field.