Formation of intrinsic oxide layers by ion implantation of silicon and titanium in the low kiloelectronvolt regime
- 1 July 1991
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 139, 214-219
- https://doi.org/10.1016/0921-5093(91)90619-x
Abstract
No abstract availableKeywords
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