A high-resolution electron microscopy study of secondary dislocations in Σ = 3, [ī10]—(ī1) grain boundaries of aluminium
- 1 July 1991
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 64 (1) , 245-253
- https://doi.org/10.1080/01418619108206138
Abstract
The atomic structure of secondary dislocations at Σ = 3, [ī10]—(ī1) grain boundaries in pure aluminium have been studied by high-resolution electron microscopy. In defect-free regions, the grain boundary coincident-site lattice is continuous across the interface but several different secondary grain-boundary dislocations are observed in the vicinity of interplanar steps.Keywords
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