Fine‐Line Patterning of Parylene‐n by Reactive Ion Etching for Application as an Interlayer Dielectric

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Abstract
This paper investigates the fine‐line patterning of the vapor deposited polymer parylene‐n, as a candidate material for a low dielectric constant interlayer dielectric in multilevel metallization. Etch rates have been determined in plasmas of both pure oxygen and a mixture of . Half‐micron, anisotropic patterns have also been produced and the conditions for obtaining straight‐wall profiles have been determined. In addition, inlayed structures of the damascene type have been fabricated. The effects of plasma treatment on the parylene surface are also reported.

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