ESR and Conductivity in Amorphous Germanium and Silicon
- 1 April 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 80 (2) , 491-498
- https://doi.org/10.1002/pssb.2220800210
Abstract
A theory is outlined for the temperature dependence of the ESR linewidth in amorphous germanium and silicon. By connecting the lifetime broadening with the motion of the spins, and assuming a distribution of spin relaxation times, the experimental results may be explained, in particular the observed relationship between temperature dependent linewidth and dc conductivity.Keywords
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