Visible cathodoluminescence of Er-doped amorphous AlN thin films
- 17 May 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (20) , 3008-3010
- https://doi.org/10.1063/1.123995
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Photoluminescence of erbium-implanted GaN and in situ-doped GaN:ErApplied Physics Letters, 1998
- High-pressure low-temperature phase transition in a dopedpara-terphenyl crystal: A spectral-hole-burning studyPhysical Review B, 1998
- Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaNJournal of Applied Physics, 1997
- Er doping of AlN during growth by metalorganic molecular beam epitaxyApplied Physics Letters, 1996
- Neodymium and Erbium Implanted GanMRS Proceedings, 1996
- Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substratesApplied Physics Letters, 1995
- Erbium-doped indium oxide films prepared by radio frequency sputteringJournal of Vacuum Science & Technology A, 1994
- 1.54-μm photoluminescence from Er-implanted GaN and AlNApplied Physics Letters, 1994
- Electrochemical Er doping of porous silicon and its room-temperature luminescence at ∼1.54 μmApplied Physics Letters, 1994
- Optical and electrical properties of rare earth (Yb,Er) doped GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1994