Effect of Device Temperature on RF FET Power Density

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 969-972
• https://doi.org/10.4028/www.scientific.net/msf.264-268.969

Abstract

Keywords

• FIELD-EFFECT TRANSISTOR
• GALLIUM ARSENIDE
• HFET
• HIGH-POWER HIGH-FREQUENCY
• MESFET
• RF POWER
• SILICON
• SIMULATION MODELING
• THERMAL CONDUCTIVITY (TC)