Infrared photovoltaic detectors utilizing Hg1−xMnxTe and Hg1−x−yCdxMnyTe alloys
- 1 July 1986
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 4 (4) , 2014-2018
- https://doi.org/10.1116/1.574018
Abstract
P–n junctions in ternary Hg1−xMnxTe and quaternary Hg1−x−yCdxMnyTe semimagnetic semiconducting alloys with energy band gaps from 100 to 770 meV were produced by the Hg diffusion method. Current–voltage curves, differential resistivity, and spectral characteristics were measured in the temperature range from 4.2 to 300 K. Material and technological parameters on the electric and photoelectric properties of p–n junctions were analyzed.Keywords
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