Theory of switching in polysilicon- n-p + silicon structures
- 8 January 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (1) , 41-42
- https://doi.org/10.1049/el:19810030
Abstract
A simple theory is proposed for observed switching in polysilicon-n-p+ devices using a single grain for the polysilicon layer. The switching mechanism is similar to that in the tunnel oxide device but differs in that the conduction mechanism in the polysilicon is by thermionic emission rather than tunnelling. Alternative implementations are suggested using ion implantation, or molecular beam epitaxial gallium arsenide.Keywords
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