p -type SiGe channel modulation doped field-effect transistors with post-evaporation patterned submicrometre Schottky gates
- 4 March 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (5) , 486-488
- https://doi.org/10.1049/el:19930325
Abstract
Schottky gate biased p-type MODFETs with an Si0.03Ge0.35 channel are presented. A wet-chemical post-evaporation procedure of the Schottky gates allows the reduction of the gate length LG to submicrometre dimensions (0.5 μm). The gate length dependence of the transconductance gme and gmi is reported. Maximum values are 37 or 103mS/mm at 300 or 77 K. The devices work in the enhancement mode.Keywords
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- Electronic Si/SiGe devices: Basics, technology, performancePublished by Springer Nature ,2007